Dopant-stimulated growth of GaN nanotube-like nanostructures on Si(111) by molecular beam epitaxy

• Alexey D. Bolshakov,
• Alexey M. Mozharov,
• Georgiy A. Sapunov,
• Igor V. Shtrom,
• Nickolay V. Sibirev,
• Vladimir V. Fedorov,
• Evgeniy V. Ubyivovk,
• Maria Tchernycheva,
• George E. Cirlin and
• Ivan S. Mukhin

Beilstein J. Nanotechnol. 2018, 9, 146–154, doi:10.3762/bjnano.9.17

• concentration in the nanostructures exceeds 5∙1019 cm−3. Keywords: A3B5 on Si; epitaxy; GaN; MBE; nanowires; nanotubes; nanotube-like nanostructures; Si; Introduction Gallium nitride quasi-one-dimensional nanostructures such as nanowires (NWs) and nanotubes (NTs) synthesized by means of plasma-assisted